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sem and ebsd analyses  (JEOL)


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    Structured Review

    JEOL sem and ebsd analyses
    Grain size of the poly-Ge layers. ( a – c ) <t>SEM</t> and ( d–f <t>)</t> <t>EBSD</t> images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.
    Sem And Ebsd Analyses, supplied by JEOL, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/sem and ebsd analyses/product/JEOL
    Average 90 stars, based on 1 article reviews
    sem and ebsd analyses - by Bioz Stars, 2026-03
    90/100 stars

    Images

    1) Product Images from "High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization"

    Article Title: High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

    Journal: Scientific Reports

    doi: 10.1038/s41598-017-17273-6

    Grain size of the poly-Ge layers. ( a – c ) SEM and ( d–f ) EBSD images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.
    Figure Legend Snippet: Grain size of the poly-Ge layers. ( a – c ) SEM and ( d–f ) EBSD images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.

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    Grain size of the poly-Ge layers. ( a – c ) <t>SEM</t> and ( d–f <t>)</t> <t>EBSD</t> images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.
    Sem And Ebsd Analyses, supplied by JEOL, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/sem and ebsd analyses/product/JEOL
    Average 90 stars, based on 1 article reviews
    sem and ebsd analyses - by Bioz Stars, 2026-03
    90/100 stars
    		  Buy from Supplier

    Image Search Results


    Grain size of the poly-Ge layers. ( a – c ) SEM and ( d–f ) EBSD images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.

    Journal: Scientific Reports

    Article Title: High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

    doi: 10.1038/s41598-017-17273-6

    Figure Lengend Snippet: Grain size of the poly-Ge layers. ( a – c ) SEM and ( d–f ) EBSD images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.

    Article Snippet: The SEM and EBSD analyses were performed using a JEOL JSM-7001F with a TSL OIM analysis attachment.

    Techniques: